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NGTB40N120FLWG Datasheet(PDF) 3 Page - ON Semiconductor |
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NGTB40N120FLWG Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 10 page NGTB40N120FLWG http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Unit Max Typ Min Symbol Test Conditions DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 150°C VF − − 2.7 3.5 3.5 V Reverse recovery time TJ = 25°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms trr − 200 − ns Reverse recovery charge Qrr − 1.5 − mc Reverse recovery current Irrm − 15 − A Reverse recovery time TJ = 125°C IF = 40 A, VR = 400 V diF/dt = 200 A/ms trr − 260 − ns Reverse recovery charge Qrr − 2.0 − mc Reverse recovery current Irrm − 22 − A |
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