ZXMP6A18DN8

Document Number DS33592 Rev 3 - 2

4 of 8

www.diodes.com

December 2014

© Diodes Incorporated

ZXMP6A18DN8

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-60

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

-1

µA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

⎯

⎯

V

Static Drain-Source On-Resistance (Note 12)

⎯

⎯

0.055

Ω

0.08

Forward Transconductance (Notes 12 & 14)

⎯

8.7

⎯

S

Diode Forward Voltage (Note 12)

⎯

-0.85

-0.95

V

Reverse Recovery Time (Note 14)

37

⎯

ns

Reverse Recovery Charge (Note 14)

⎯

56

⎯

nC

DYNAMIC CHARACTERISTICS

(Note 14)

Input Capacitance

⎯

1580

⎯

pF

f = 1MHz

Output Capacitance

⎯

160

⎯

pF

Reverse Transfer Capacitance

⎯

140

⎯

pF

Total Gate Charge (Note 13)

⎯

23

⎯

nC

Total Gate Charge (Note 13)

⎯

44

⎯

nC

Gate-Source Charge (Note 13)

⎯

3.9

⎯

nC

Gate-Drain Charge (Note 13)

⎯

9.8

⎯

nC

Turn-On Delay Time (Note 13)

⎯

4.6

⎯

ns

Turn-On Rise Time (Note 13)

⎯

5.8

⎯

ns

Turn-Off Delay Time (Note 13)

⎯

55

⎯

ns

Turn-Off Fall Time (Note 13)

⎯

23

⎯

ns

Notes:

12. Measured under pulsed conditions. Pulse width

≤ 300µs; duty cycle ≤ 2%.

13. Switching characteristics are independent of operating junction temperatures.

14. For design aid only, not subject to production testing.