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ZXT10P20DE6 Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXT10P20DE6 Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page  ZXT10P20DE6 Document Number: DS33625 Rev: 4 - 2 4 of 7 www.diodes.com May 2015 © Diodes Incorporated ZXT10P20DE6 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -20 -65 V IC = -100µA Collector-Emitter Breakdown Voltage (Note 9) BVCEO -20 -53 V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.8 V IE = -100µA Collector-Base Cutoff Current ICBO <1 -100 nA VCB = -15V Emitter Cutoff Current IEBO <1 -100 nA VEB = -5V Collector-Emitter Cutoff Current ICES <1 -100 nA VCES = -15V ON CHARACTERISTICS (Note 9) DC Current Gain hFE 300 475 IC = -10mA, VCE = -2V 300 450 IC = -0.1A, VCE = -2V 150 230 IC = -2A, VCE = -2V 15 30 IC = -6A, VCE = -2V Collector-Emitter Saturation Voltage VCE(sat) -19 -30 mV IC = -0.1A, IB = -10mA -170 -220 IC = -1A, IB = -20mA -190 -250 IC = -1.5A, IB = -50mA -240 -350 IC = -2.5A, IB = -150mA Base-Emitter Saturation Voltage VBE(sat) -0.97 -1.05 V IC = -2.5A, IB = -150mA Base-Emitter Turn-On Voltage VBE(on) -0.85 -0.95 V IC = -2.5A, VCE = -2V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT 150 180 MHz VCE = -10V, IC = -50mA, f = 100MHz Output Capacitance Cobo 21 30 pF VCB = -10V, f = 1MHz Turn-On Time t(on) 40 ns VCC = -10V, IC = -1A IB1 = -IB2 = -20mA Turn-Off Time t(off) 670 ns Note: 9. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%. |
Similar Part No. - ZXT10P20DE6_15 |
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Similar Description - ZXT10P20DE6_15 |
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