Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGA2286Z

DC to 5000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

The SGA2286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-

formance. The heterojunction increases breakdown voltage and minimizes leakage

current between junctions. Cancellation of emitter junction non-linearities results in

higher suppression of intermodulation products. Only two DC-blocking capacitors, a

bias resistor, and an optional RF choke are required for operation.

Gain & Return Loss vs. Freq. @T

0

6

12

18

24

01

23

45

Frequency (GHz)

-40

-30

-20

-10

0

GAIN

IRL

ORL



High Gain: 14dB at 1950MHz



Cascadable 50

Ω



Operates from Single Supply



Low Thermal Resistance

Package

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS100915



Package: SOT-86

SGA2286ZDC

to 5000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

13.5

15.0

16.5

dB

850MHz

14.0

dB

1950MHz

12.6

dB

2400MHz

Output Power at 1dB Compression

8.3

dBm

850MHz

7.0

dBm

1950MHz

Output Third Intercept Point

20.0

dBm

850MHz

19.4

dBm

1950MHz

Bandwidth Determined by Return

Loss (>10dB)

5000

MHz

Input Return Loss

16.8

dB

1950MHz

Output Return Loss

19.5

dB

1950MHz

Noise Figure

3.5

dB

1950MHz

Device Operating Voltage

1.9

2.2

2.5

V

Device Operating Current

17

20

23

mA

Thermal Resistance

(Junction - Lead)

97

°C/W