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M30800FGFP Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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M30800FGFP Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
5 / 317 page 5 Under development Preliminary Specifications REV.D Specifications in this manual are tentative and subject to change. Mitsubishi microcomputers M16C/80 (100-pin version) group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description Item Performance Number of basic instructions 106 instructions Shortest instruction execution time 50ns(f(XIN)=20MHz) Memory See ROM expansion figure. capacity 10/20 K bytes I/O port 8 bits x 10, 7 bits x 1 Input port 1 bit x 1 Multifunction 16 bits x 5 timer 16 bits x 6 Serial I/O (UART or clock synchronous) x 5 A-D converter 10 bits x (8 + 2) channels D-A converter 8 bits x 2 DMAC 4 channels DRAM controller CAS before RAS refresh, self-refresh, EDO, FP CRC calculation circuit CRC-CCITT X-Y converter 16 bits X 16 bits Watchdog timer 15 bits x 1 (with prescaler) Interrupt 29 internal and 8 external sources, 5 software sources, 7 levels Clock generating circuit 2 built-in clock generation circuits (built-in feedback resistance, and external ceramic or quartz oscillator) Supply voltage 4.2 to 5.5V (f(XIN)=20MHz) Mask ROM and flash memory version 2.7 to 5.5V (f(XIN)=10MHz) Mask ROM and flash memory version Power consumption 45mA (f(XIN) = 20MHz without software wait,Vcc=5V) Mask ROM 128 Kbytes version I/O 5V characteristics 5mA Memory expansion Available (up to 16M bytes) Operating ambient temperature –40 to 85oC Device configuration CMOS high performance silicon gate Package 100-pin plastic mold QFP Table 1.1.1. Performance outline of M16C/80 (100-pin version) group Performance Outline Table 1.1.1 is a performance outline of M16C/80 (100-pin version) group. ROM RAM P0 to P10 (except P85) P85 TA0, TA1, TA2, TA3,TA4 TB0, TB1, TB2, TB3, TB4, TB5 UART0, UART1, UART2, UART3, UART4 I/O withstand voltage Output current |
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