Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGA5486Z

DC to 3500MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

The SGA5486Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-

formance. The heterojunction increases breakdown voltage and minimizes leakage

current between junctions. Cancellation of emitter junction non-linearities results in

higher suppression of intermodulation products. Only two DC-blocking capacitors, a

bias resistor, and an optional RF choke are required for operation.

0

6

12

18

24

01

2

3

45

Frequency (GHz)

-40

-30

-20

-10

0

GAIN

IRL

ORL

Gain & Return Loss vs. Frequency

V

T



High Gain: 16.3dB at

1950MHz



Cascadable 50





Operates from Single Supply



Low Thermal Resistance

Package

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS110203



Package: SOT-86

SGA5486ZDC

to 3500MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

18.8

dB

850MHz

16.3

dB

1950MHz

15.4

dB

2400MHz

Output Power at 1dB Compression

17.0

dBm

850MHz

15.0

dBm

1950MHz

Output Third Intercept Point

32.0

dBm

850MHz

28.0

dBm

1950MHz

Bandwidth Determined by Return Loss

3500

MHz

>10dB

Input Return Loss

14.8

dB

1950MHz

Output Return Loss

27.8

dB

1950MHz

Noise Figure

3.6

dB

1950MHz

Device Operating Voltage

3.1

3.5

3.9

V

Device Operating Current

546066

mA

Thermal Resistance

(Junction - Lead)

97

°C/W