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IRF6802SDPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF6802SDPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 9 page DirectFET® plus Power MOSFET Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.78mH, RG = 50Ω, IAS = 13A. Notes: DirectFET® plusISOMETRIC l RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested SA D D S G S G SQ SX ST SA MQ MX MT MP MB 2 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) 0 2 4 6 8 10 ID = 16A TJ = 25°C TJ = 125°C 0 5 10 15 20 25 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 20V VDS= 13V VDS= 6.0V ID= 13A VDSS VGS RDS(on) RDS(on) 25V max ±16V max 3.2m Ω@ 10V 4.5mΩ@ 4.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 66 Max. 13 57 130 ±16 25 16 13 Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 8.8nC 3.1nC 1.1nC 22nC 13nC 1.6V Description The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6802SDTRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6802SDTRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. IRF6802SDPbF IRF6802SDTRPbF 1 www.irf.com © 2013 International Rectifier September 10, 2013 |
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