2N3773_13 datasheet(4/5 Pages) ONSEMI

Part #	2N3773

Description	NPN Power Transistors 16 A NPN POWER TRANSISTORS 140 V, 150 W

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2N3773

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TYPICAL CHARACTERISTICS

Figure 7. Output Capacitance

Figure 8. Input Capacitance

VCB, COLLECTOR−BASE VOLTAGE (V)

VEB, EMITTER−BASE VOLTAGE (V)

200

150

100

50

0

10

100

1000

7

6

5

4

3

2

1

0

100

1000

10,000

f = 1 MHz

TA = 25°C

f = 1 MHz

TA = 25°C

8

30

3.0

Figure 9. Forward Bias Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

20

10

5.0

3.0

2.0

1.0

0.5

0.03

5.0 7.0

10

20

30

50

300

BONDING WIRE LIMIT

THERMAL LIMIT

@ TC = 25°C, SINGLE PULSE

SECOND BREAKDOWN LIMIT

70

0.3

0.2

dc

10

ms

100

ms

100 ms

0.1

0.05

100

200

40

ms

200

ms

1.0 ms

500 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation: i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 9 is based on TJ(pk) = 200_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 200

_C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

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