Features

1 of 8

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SGB-2233(Z)

DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK

RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Dar-

lington configuration with an active bias network. The active bias network provides

stable current over temperature and process Beta variations. Designed to run

directly from a 3Vto5V supply the SGB-2233 does not require a drop resistor as

compared to typical Darlington amplifiers. This robust amplifier features a Class 1C

ESD rating, low thermal resistance, and unconditional stability. The SGB-2233

product is designed for high linearity 3V gain block applications that require small

size and minimal external components. It is on chip matched to 50

Ω and an exter-

nal bias inductor choke is required for the application band.

NC

NC

NC

NC

NC

RFIN

NC

RFOUT

Active

Bias

High Reliability SiGe HBT

Technology

Robust Class 1C ESD

Simple and Small Size

Low Thermal

Resistance=221C/W

Applications

3V Battery Operated Applica-

tions

LO Buffer Amp

RF Pre-Driver and RF Receive

Path

EDS-103079 Rev H

Preliminary

RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)

Package: 3x3 QFN, 16-Pin

SGB-2233(Z)

DC to 4.5GHz

Active Bias

Gain Block

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

13.9

dB

850MHz

11.4

12.9

14.4

dB

1950MHz

12.5

dB

2400MHz

Output Power at 1dB Compression

7.9

dBm

850MHz

5.2

6.7

dBm

1950MHz

6.4

dBm

2400MHz

Output Third Order Intercept Point

20.5

dB

850MHz

16.5

19.0

dB

1950MHz

19.0

dB

2400MHz

Noise Figure

4.2

5.2

dB

1950MHz

Frequency of Operation

DC

4500

MHz

Input Return Loss

13.5

19.5

dB

1950MHz

Output Return Loss

12.7

16.7

dB

1950MHz

Current

21.0

25.0

29.0

mA

Thermal Resistance

221

°C/W

junction to backside