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SGB2400 Datasheet(PDF) 2 Page - RF Micro Devices

Part # SGB2400
Description  DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SGB2400 Datasheet(HTML) 2 Page - RF Micro Devices

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DS120619
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGB2400
Typical Performance of SGB2433Z Packaged Part: VCC = 3V, ID = 25mA, T = 25°C, Z = 50
Absolute Maximum Ratings
Parameter
Rating
Unit
Total Current (ID)60
mA
Device Voltage (VD)5
V
Power Dissipation
0.2
W
Operating Lead Temperature (TL)-40 to +85
°C
RF Input Power
20
dBm
Storage Temperature Range
-55 to +150
°C
Operating Junction Temp (TJ)+150
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the fol-
lowing expression: IDVD < (TJ - TL)/RTH, j-l
Parameter
Units 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz
Small Signal Gain
dB
19.7
19.5
19.1
17.2
16.2
14.0
Output 3rd Order Intercept Point (Note 1)
dBm
20.0
19.5
18.0
18.0
Output Power at 1dB Compression
dBm
8.3
7.7
6.9
6.2
Input Return Loss
dB
25.0
19.9
17.1
13.4
12.7
10.5
Output Return Loss
dB
20.5
18.9
17.1
13.6
13.1
13.0
Reverse Isolation
dB
22.4
22.6
22.9
23.7
23.9
24.5
Noise Figure
dB
3.8
3.2
3.2
3.5
3.9
4.3
Note 1: OIP3 POUT/TONE = -10dBm with 1MHz tone spacing.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.


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