ZXMN3B14F

SEMICO NDUC TORS

ISSUE 2 - JANUARY 2006

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

30

V

Zero Gate Voltage Drain Current

1

Gate-Body Leakage

100

nA

Gate-Source Threshold Voltage

0.7

V

Static Drain-Source On-State

Resistance

(1)

0.080

0.140

Forward Transconductance

(1) (3)

8.5

S

DYNAMIC

(3)

Input Capacitance

568

pF

f=1MHz

Output Capacitance

101

pF

Reverse Transfer Capacitance

66

pF

SWITCHING

(2) (3)

Turn-On-Delay Time

3.6

ns

Rise Time

4.9

ns

Turn-Off Delay Time

17.3

ns

Fall Time

9.8

ns

Total Gate Charge

6.7

nC

Gate-Source Charge

1.4

nC

Gate Drain Charge

1.8

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

0.82

0.95

V

Reverse Recovery Time

(3)

10.8

ns

di/dt=100A/ s

Reverse Recovery Charge

(3)

4.54

nC

NOTES

(1) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.