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SGL0263ZSR Datasheet(PDF) 2 Page - RF Micro Devices

Part # SGL0263ZSR
Description  1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER
Download  6 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SGL0263ZSR Datasheet(HTML) 2 Page - RF Micro Devices

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DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGL0263Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)45
mA
Max Device Voltage (VD)5
V
Max RF Input Power
+10
dBm
Max Junction Temp (TJ)+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Max Storage Temp
+150
°C
ESD
1A
Class
MSL
1
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Input IP3 vs. Frequency Over Temperature
4
6
8
10
12
14
16
18
20
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Freq. (MHz)
T=-40°C, VS=3 V
T=+25°C, VS=3 V
T=+85°C, VS=3 V
T=-40°C, VS=4 V
T=+25°C, VS=4 V
T=+85°C, VS=4 V
P1dB vs. Frequency Over Temperature
0
2
4
6
8
10
12
14
16
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Freq. (MHz)
T=-40°C, VS=3 V
T=+25°C, VS=3 V
T=+85°C, VS=3 V
T=-40°C, VS=4 V
T=+25°C, VS=4 V
T=+85°C, VS=4 V
Noise Figure vs. Frequency at TLEAD=+25C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1400
1600
1800
2000
2200
2400
Freq. (MHz)
Vs=3 V
Vs=4 V
Typical RF Performance Over Lead Temperature at 3 V and 4 V -- 1400-2500 MHz Evaluation Board
Output IP3 vs. Frequency Over Temperature
18
20
22
24
26
28
30
32
34
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Freq. (MHz)
T=-40°C, VS=3 V
T=+25°C, VS=3 V
T=+85°C, VS=3 V
T=-40°C, VS=4 V
T=+25°C, VS=4 V
T=+85°C, VS=4 V
Device Voltage (Vd) vs. Device Current (Id)
for T = -40C, +25C, & +85C
Load lines for Vs =+5 Volts, Rs=43
W and 180 W
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6
8
10
12
14
16
18
20
22
24
26
Id (mA)
T=-40C
T=+25C
T=+85C
Vs= +5 V, Rs = 43
W
Vs = +5 V, Rs = 180
W


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