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FZ06NRA045FH Datasheet(PDF) 3 Page - Vincotech |
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FZ06NRA045FH Datasheet(HTML) 3 Page - Vincotech |
3 / 27 page FZ06NRA045FH preliminary datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 1 1,55 1,8 Tj=125°C 1,66 Tj=25°C 25 Tj=125°C 23 Tj=25°C 9,9 Tj=125°C 10,7 Tj=25°C 0,108 Tj=125°C 0,113 di(rec)max Tj=25°C 7192 /dt Tj=125°C 5586 Tj=25°C 0,007 Tj=125°C 0,010 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 2,36 K/W Tj=25°C 42 Tj=125°C 83 Tj=25°C 2,1 3 3,9 Tj=125°C Tj=25°C 200 Tj=125°C Tj=25°C 25 Tj=125°C Tj=25°C 33 Tj=125°C 31 Tj=25°C 7 Tj=125°C 8 Tj=25°C 278 Tj=125°C 298 Tj=25°C 4 Tj=125°C 6 Tj=25°C 0,095 Tj=125°C 0,108 Tj=25°C 0,064 Tj=125°C 0,091 pF f=1MHz 0 100 Idss 0,003 VDS=VGS 350 30 30 16 600 15 350 0 20 Thermal grease thickness ≤50um λ = 1 W/mK 350 Ciss Coss Qgs Rgoff=8 Ω Erec IRRM td(ON) Rds(on) V(GS)th Igss tr td(OFF) Eon Qgd RthJH 44 Tj=25°C Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Static drain to source ON resistance Buck MOSFET Gate threshold voltage Value Conditions Characteristic Values V μC mWs A/ μs m Ω ns mWs 6800 K/W 190 μA nA Fall time Turn off delay time Thermal resistance chip to heatsink per chip Turn-on energy loss per pulse Zero Gate Voltage Drain Current Peak reverse recovery current Diode forward voltage Rise Time 51 320 nC 30 Rgon=8 Ω 0 10 Total gate charge Reverse recovered charge Buck Diode Gate to Source Leakage Current Turn On Delay Time 15 tf VF Qg Qrr trr Output capacitance Rgon=8 Ω Turn-off energy loss per pulse Input capacitance Gate to drain charge Gate to source charge Eoff Tj=25°C 0,56 ns A V 34 150 copyright Vincotech 3 Revision: 2 |
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