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SPA1118ZSR Datasheet(PDF) 1 Page - RF Micro Devices |
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SPA1118ZSR Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 6 page Features 1 of 6 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SPA1118Z 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Tran- sistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epi- taxial growth technology which produces reliable and consistent perfor- mance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications. VCC VBIAS RFIN N/C RFOUT/ VCC Active Bias Input Match N/C N/C N/C High Linearity Performance +21dBm IS-95 Channel Power at -55dBc ACP +48dBm OIP3 Typ. On-Chip Active Bias Control Patented High Reliability GaAs HBT Technology Surface-Mountable Plastic Package Applications Multi-Carrier Applications AMPS, ISM Applications DS121024 Package: Exposed Pad SOIC-8 SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias Parameter Specification Unit Condition Min. Typ. Max. Frequency of Operation 810 960 MHz Output Power at 1dB Compression 29.5 dBm Adjacent Channel Power -57.0 -54.0 dBc IS-95 at 880MHz, ±885 KHz, POUT=21dBm Small Signal Gain 16.2 17.2 18.2 dB 880MHz Input VSWR 1.5:1 Output Third Order Intercept Point 48.0 dBm Power out per tone=+14dBm Noise Figure 7.5 dB Device Current 275 310 330 mA Device Voltage 4.75 5.0 5.25 V Thermal Resistance (junction-lead) 35 °C/W TL=85°C Test Conditions: Z0=50 VCC=5V Temp=25°C |
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