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SPA2118ZSR Datasheet(PDF) 1 Page - RF Micro Devices |
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SPA2118ZSR Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 7 page Features 1 of 7 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Tran- sistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epi- taxial growth technology which produces reliable and consistent perfor- mance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. (+1) 336-678-5570 sales-support@rfmd.com VC1 VBIAS RFIN VPC2 RFOUT/ VC2 Active Bias High Linearity Performance +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP +47dBm Typ. OIP3 High Gain: 33dB Typ. On-Chip Active Bias Control Patented high Reliability GaAs HBT Technology Surface-Mountable Plastic Package Applications IS-95 CDMA Systems Multi-Carrier Applications AMPS, ISM Applications DS121024 Package: Exposed Pad SOIC-8 SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias Parameter Specification Unit Condition Min. Typ. Max. Frequency of Operation 810 900 960 MHz Output Power at 1dB Compression 29.0 dBm Adjacent Channel Power -55.0 -52.0 dBc IS-95 at 880MHz, ±885KHz offset, POUT=20.7dBm Small Signal Gain 31.5 33.0 34.5 dB 880MHz Input VSWR 1.5:1 Output Third Order Intercept Point 47.0 dBm Power out per tone=+14dBm Noise Figure 5.0 dB Device Current 360 400 425 mA IBIAS=10mA, IC1=70mA, IC2=320mA Device Voltage 4.75 5.0 5.25 V Thermal Resistance (Junction - Lead) 31 °C/W TL=85°C Test Conditions: Z0=50 Temp=25°C VCC=5.0V |
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