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SPA2118Z-EVB1 Datasheet(PDF) 1 Page - RF Micro Devices

Part # SPA2118Z-EVB1
Description  850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SPA2118Z-EVB1 Datasheet(HTML) 1 Page - RF Micro Devices

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Features
1 of 7
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SPA2118Z
850MHz 1 WATT POWER AMPLIFIER WITH
ACTIVE BIAS
RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Tran-
sistor (HBT) amplifier housed in a low-cost surface-mountable plastic
package. These HBT amplifiers are fabricated using molecular beam epi-
taxial growth technology which produces reliable and consistent perfor-
mance from wafer to wafer and lot to lot. This product is specifically
designed for use as a driver amplifier for infrastructure equipment in the
850MHz band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.
(+1) 336-678-5570
sales-support@rfmd.com
VC1
VBIAS
RFIN
VPC2
RFOUT/
VC2
Active
Bias
High Linearity Performance
+20.7dBm, IS-95 CDMA
Channel Power at -55dBc
ACP
+47dBm Typ. OIP3
High Gain: 33dB Typ.
On-Chip Active Bias Control
Patented high Reliability GaAs
HBT Technology
Surface-Mountable Plastic
Package
Applications
IS-95 CDMA Systems
Multi-Carrier Applications
AMPS, ISM Applications
DS121024
Package: Exposed Pad SOIC-8
SPA2118Z
850MHz 1
Watt Power
Amplifier with
Active Bias
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Frequency of Operation
810
900
960
MHz
Output Power at 1dB Compression
29.0
dBm
Adjacent Channel Power
-55.0
-52.0
dBc
IS-95 at 880MHz, ±885KHz offset,
POUT=20.7dBm
Small Signal Gain
31.5
33.0
34.5
dB
880MHz
Input VSWR
1.5:1
Output Third Order Intercept Point
47.0
dBm
Power out per tone=+14dBm
Noise Figure
5.0
dB
Device Current
360
400
425
mA
IBIAS=10mA, IC1=70mA, IC2=320mA
Device Voltage
4.75
5.0
5.25
V
Thermal Resistance
(Junction - Lead)
31
°C/W
TL=85°C
Test Conditions: Z0=50 Temp=25°C VCC=5.0V


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