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SPA2118Z-EVB1 Datasheet(PDF) 4 Page - RF Micro Devices

Part # SPA2118Z-EVB1
Description  850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SPA2118Z-EVB1 Datasheet(HTML) 4 Page - RF Micro Devices

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DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SPA2118Z
Simplified Device Schematic
Recommended Land Pattern
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
Pin
Function
Description
1VC1
Supply voltage for the first stage transistor. The configuration as shown on the application schematic is required for opti-
mum RF performance.
2VBIAS
Bias control pin for the active bias network. Recommended configuration is shown in the application schematic.
3RF IN
RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the application shcematic.
4VPC2
Bias control pin for the active bias network for the second stage. The recommended configuration is shown in the appli-
cation schematic.
5, 6,
7, 8
RF OUT/VC2 RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present
on this pin a DC-blocking capacitor should be used in most applications. (See application schematic.) The supply side of
the bias network should be well bypassed. An output matching network is necessary for optimum performance.
EPAD
GND
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and
RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern.
2
3
5-8
ACTIVE BIAS
NETWORK
ACTIVE BIAS
NETWORK
2
4
1
(
r
e
t
e
m
a
r
a
P
0.020 [0.51]
0.140 [3.56]
0.080 [2.03]
0.050 [1.27]
0.150 [3.81]
0.300 [7.62]
Plated-Thru Holes
(0.015" Dia, 0.030" Pitch)
Machine
Screws


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