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SPA2318Z-EVB2 Datasheet(PDF) 1 Page - RF Micro Devices |
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SPA2318Z-EVB2 Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 8 page Features 1 of 8 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SPA2318Z 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker forma- tion and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retar- dants. (+1) 336-678-5570 sales-support@rfmd.com VC1 VBIAS RFIN VPC2 RFOUT/ VC2 Active Bias High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3 On-Chip Active Bias Control High Gain: 24dB Typ. at 1960MHz Patented High Reliability GaAs HBT Technology Surface-Mountable Plastic Package Applications WCDMA Systems PCS Systems Multi-Carrier Applications DS121024 Package: Exposed Pad SOIC-8 SPA2318ZLow Noise, High Gain SiGe HBT Parameter Specification Unit Condition Min. Typ. Max. Frequency of Operation 1700 2200 MHz Output Power at 1dB Compression [1] 29.5 dBm 1960MHz 29.5 dBm 2140MHz Adjacent Channel Power [1] -55.0 dBc 1960MHz, IS-95 at POUT=21.0dBm, WCDMA at POUT=20.7dBm -50.0 -47.0 dBc 2140MHz Small Signal Gain [1,2] 24.0 dB 1960MHz 21.0 23.5 24.5 dB 2140MHz Input VSWR [1,2] 1.6:1 1960MHz 1.6:1 2140MHz Output Third Order Intercept Point [2] 46.5 dBm 1960MHz, Power out per tone=+14dBm 47.0 dBm 2140MHz Noise Figure [1,2] 5.5 dB 1960MHz 5.5 dB 2140MHz Device Current [1,2] 360 400 425 mA IBIAS=10mA, IC1=70mA, IC2=320mA Device Voltage [1,2] 4.75 5.0 5.25 V Thermal Resistance (Junction - Lead) 31 °C/W TL=85°C Test Conditions: Z0=50 Temp=25°C VCC=5.0V [1] Optimal ACP tune [2] Optimal IP3 tune |
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