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SPA2318Z-EVB2 Datasheet(PDF) 1 Page - RF Micro Devices

Part # SPA2318Z-EVB2
Description  1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SPA2318Z-EVB2 Datasheet(HTML) 1 Page - RF Micro Devices

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Features
1 of 8
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SPA2318Z
1700MHz to 2200MHz 1 WATT POWER AMP
WITH ACTIVE BIAS
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)
amplifier housed in a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial growth technology which
produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure
equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an
ideal choice for multi-carrier and digital applications. The matte tin finish on the
lead-free package utilizes a post annealing process to mitigate tin whisker forma-
tion and is RoHS compliant per EU Directive 2002/95. This
package is also manufactured with green molding compounds
that contain no antimony trioxide or halogenated fire retar-
dants.
(+1) 336-678-5570
sales-support@rfmd.com
VC1
VBIAS
RFIN
VPC2
RFOUT/
VC2
Active
Bias
High Linearity Performance:
+21dBm IS-95 Channel
Power at -55dBc ACP;
+20.7dBm WCDMA Channel
Power at -50dBc ACP;
+47dBm Typ. OIP3
On-Chip Active Bias Control
High Gain: 24dB Typ. at
1960MHz
Patented High Reliability
GaAs HBT Technology
Surface-Mountable Plastic
Package
Applications
WCDMA Systems
PCS Systems
Multi-Carrier Applications
DS121024
Package: Exposed Pad SOIC-8
SPA2318ZLow
Noise, High
Gain SiGe HBT
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Frequency of Operation
1700
2200
MHz
Output Power at 1dB Compression [1]
29.5
dBm
1960MHz
29.5
dBm
2140MHz
Adjacent Channel Power [1]
-55.0
dBc
1960MHz, IS-95 at POUT=21.0dBm, WCDMA at
POUT=20.7dBm
-50.0
-47.0
dBc
2140MHz
Small Signal Gain [1,2]
24.0
dB
1960MHz
21.0
23.5
24.5
dB
2140MHz
Input VSWR [1,2]
1.6:1
1960MHz
1.6:1
2140MHz
Output Third Order Intercept Point [2]
46.5
dBm
1960MHz, Power out per tone=+14dBm
47.0
dBm
2140MHz
Noise Figure [1,2]
5.5
dB
1960MHz
5.5
dB
2140MHz
Device Current [1,2]
360
400
425
mA
IBIAS=10mA, IC1=70mA, IC2=320mA
Device Voltage [1,2]
4.75
5.0
5.25
V
Thermal Resistance
(Junction - Lead)
31
°C/W
TL=85°C
Test Conditions: Z0=50 Temp=25°C VCC=5.0V [1] Optimal ACP tune [2] Optimal IP3 tune


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