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SPA2318Z-EVB2 Datasheet(PDF) 7 Page - RF Micro Devices

Part # SPA2318Z-EVB2
Description  1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SPA2318Z-EVB2 Datasheet(HTML) 7 Page - RF Micro Devices

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DS121024
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SPA2318Z
Simplified Device Schematic
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
Pin
Function
Description
1VC1
VC1 is the supply voltage for the first stage transistor. The configuration as shown on the Application Schematic is
required for optimum RF performance.
2VBIAS
VBias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Sche-
matic.
3RF IN
RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic.
4VPC2
VPC2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in
the Application Schematic.
5, 6,
7, 8
RF OUT / VC2 RF output and bias pins. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present
on this pin, a DC blocking capacitor should be used in most applications (see Application Schematic). The supply side of
the bias network should be well bypassed. An output matching network is necessary for optimum performance.
EPAD
GND
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and
RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern.
2
3
5-8
ACTIVE BIAS
NETWORK
ACTIVE BIAS
NETWORK
2
4
1
Simplified Device Schematic
A
Parame
Max. Su
Max. Su
Max. De
Max. RF


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