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SPF5122ZSR Datasheet(PDF) 1 Page - RF Micro Devices |
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SPF5122ZSR Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 12 page Features 1 of 12 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS SPF5122Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER The SPF5122Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network pro- vides stable current over temperature and process threshold voltage vari- ations. The SPF5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers. Gain and NF versus Frequency Broadband Application Circuit (5V, 90mA) 1.0 4.0 7.0 10.0 13.0 16.0 19.0 22.0 25.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency (GHz) 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 Gain NF Ultra-Low Noise Figure=0.60dB at 900MHz Gain=18.9dB at 900MHz High Linearity: OIP3=40.5dBm at 1900MHz Channel Power=13.4dBm (- 65dBc IS95 ACPR, 880MHz) P1dB=23.4dBm at 1900MHz Single-Supply Operation: 5V at IDQ=90mA Flexible Biasing Options: 3-5V, Adjustable Current Broadband Internal Matching Applications Cellular, PCS, W-CDMA, ISM, WiMAX Receivers PA Driver Amplifier Low Noise, High Linearity Gain Block Applications DS110408 SPF5122Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Ampli- fier Parameter Specification Unit Condition Min. Typ. Max. Small Signal Power Gain 17.2 18.9 20.2 dB 0.9GHz 11.2 12.2 14.4 dB 1.96GHz Output Power at 1dB Compression 20.8 22.8 dBm 0.9GHz 21.4 23.4 dBm 1.9GHz Output Third Order Intercept Point 35.1 38.1 dBm 0.9GHz 37.2 40.5 dBm 1.9GHz Noise Figure 0.59 0.85 dB 0.9GHz 0.65 0.9 dB 1.9GHz Input Return Loss 10 14.3 dB 0.9 GHz 21 dB 1.9GHz Output Return Loss 14 17 dB 0.9GHz 13 dB 1.9GHz Reverse Isolation 24.1 dB 0.9GHz 18.4 dB 1.9GHz Device Operating Voltage 5.00 5.25 V Device Operating Current 75 90 105 mA Quiescent Thermal Resistance 65 °C/W Junction to lead Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, ZS=ZL=50, 25°C, Broadband Application Circuit |
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