Parameter

Max.

Units

Drain- Source Voltage

-12

V

-9.2

-7.4

A

Pulsed Drain Current



-37

Power Dissipation

ƒ

2.0

Power Dissipation

ƒ

1.3

Linear Derating Factor

16

mW/°C

Gate-to-Source Voltage

± 8.0

V

Junction and Storage Temperature Range

-55 to + 150

°C

10/7/04

www.irf.com

1

IRF7329PbF

PD - 95042

Absolute Maximum Ratings

W

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Drain Lead

–––

20

Junction-to-Ambient

ƒ

–––

62.5

°C/W

Thermal Resistance

±

9.2A

-12V

±

7.4A

±

4.6A

Description

l

Trench Technology

l

Ultra Low On-Resistance

l

Dual P-Channel MOSFET

l

Low Profile (<1.8mm)

l

Available in Tape & Reel

l

Lead-Free

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering technique

s.

SO-8

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7