2N6036G datasheet(4/6 Pages) ONSEMI

Part #	2N6036G

Description	Plastic Darlington Complementary Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)

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4

ACTIVE−REGION SAFE−OPERATING AREA

1.0

5.0

Figure 4. 2N6035, 2N6036

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

7.0

5.0

3.0

2.0

0.1

7.0

10

30

50

100

BONDING WIRE LIMITED

THERMALLY LIMITED

70

1.0

TJ = 150°C

dc

1.0ms

100

ms

Figure 5. 2N6038, 2N6039

0.7

0.5

0.2

20

2N6036

2N6035

0.3

1.0

5.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

7.0

5.0

3.0

2.0

0.1

7.0

10

30

50

100

70

1.0

0.7

0.5

0.2

20

2N6039

2N6038

0.3

5.0ms

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

100

ms

1.0ms

5.0ms

dc

BONDING WIRE LIMITED

THERMALLY LIMITED

TJ = 150°C

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 4 and 5 is based on TJ(pk) = 150

_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

_C. TJ(pk) may be calculated from the data in Figure 3.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

200

0.04

VR, REVERSE VOLTAGE (VOLTS)

10

0.4 0.6 1.0

2.0

40

4.0

0.06 0.1

0.2

100

50

30

TC = 25°C

Cib

70

Cob

PNP

NPN

Figure 6. Capacitance

20

6.0

10

20

6.0 k

0.04

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

300

0.06

0.1

0.2

0.6

1.0

4.0

600

800

400

1.0 k

2.0 k

VCE = 3.0 V

0.4

2.0

PNP

2N6034, 2N6035, 2N6036

NPN

2N6038, 2N6039

4.0 k

3.0 k

TC = 125°C

25

°C

-55

°C

6.0 k

0.04

IC, COLLECTOR CURRENT (AMP)

300

0.06

0.1

0.2

0.6

1.0

4.0

600

800

400

1.0 k

2.0 k

VCE = 3.0 V

0.4

2.0

4.0 k

3.0 k

TJ = 125°C

25

°C

-55

°C

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