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2SA1705 Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2SA1705
Description  Bipolar Transistor Adoption of FBET process
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SA1705 Datasheet(HTML) 2 Page - ON Semiconductor

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2SA1705
No.3025-2/6
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=--50V, IE=0A
--100
nA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0A
--100
nA
DC Current Gain
hFE1VCE=--2V, IC=--100mA
140*
400*
hFE2VCE=--2V, IC=--1A
30
Gain-Bandwidth Product
fT
VCE=--10V, IC=--50mA
150
MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--500mA, IB=--50mA
--180
--500
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--500mA, IB=--50mA
--0.9
--1.2
V
Output Capacitance
Cob
VCB=--10V, f=1MHz
12
pF
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--10μA, IE=0A
--60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--10μA, IC=0A
--5
V
Turn-ON Time
ton
See specified Test Circuit.
40
ns
Storage Time
tstg
300
ns
Fall Time
tf
30
ns
* : The 2SA1705 is classified by 100mA hFE as follows :
Rank
S
T
hFE
140 to 280
200 to 400
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA1705S-AN
NMP(Taping)
2,500pcs./box
Pb Free
2SA1705T-AN
NMP(Taping)
2,500pcs./box
VR
RL
VCC= --25V
VBE=5V
IC=10IB1= --10IB2= --500mA
+
+
50
Ω
INPUT
OUTPUT
RB
100
μF
470
μF
PW=20
μs
IB1
IB2
D.C.
≤1%
2SA1705
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
IC -- VBE
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--1
--2
--4
--3
--5
ITR04270
IB=0
--1mA
--2mA
--4mA
--6mA
--8mA
--10mA
--12mA
VCE= --2V
--1200
--200
--400
--600
--800
--1000
0
0--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
ITR04272


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