2SA1706S-AN datasheet(2/6 Pages) ONSEMI

Part #	2SA1706S-AN

Description	Bipolar Transistor Adoption of FBET, MBIT processes

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Manufacturer	ONSEMI [ON Semiconductor]

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2SA1706

No.3026-2/6

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=--50V, IE=0A

--100

nA

Emitter Cutoff Current

IEBO

VEB=--4V, IC=0A

--100

nA

DC Current Gain

hFE1VCE=--2V, IC=--100mA

140*

400*

hFE2VCE=--2V, IC=--1.5A

40

Gain-Bandwidth Product

fT

VCE=--10V, IC=--50mA

150

MHz

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=--1A, IB=--50mA

--0.3

--0.7

V

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=--1A, IB=--50mA

--0.9

--1.2

V

Output Capacitance

Cob

VCB=--10V, f=1MHz

22

pF

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=--10μA, IE=0A

--60

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=--1mA, RBE=∞

--50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=--10μA, IC=0A

--6

V

Turn-ON Time

ton

See speciﬁed Test Circuit.

60

ns

Storage Time

tstg

450

ns

Fall Time

tf

30

ns

* : The 2SA1706 is classiﬁed by 100mA hFE as follows :

Rank

S

T

hFE

140 to 280

200 to 400

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SA1706S-AN

NMP(Taping)

2,500pcs./box

Pb Free

2SA1706T-AN

NMP(Taping)

2,500pcs./box

VR

RL

VCC= --25V

VBE=5V

IC=10IB1= --10IB2= --500mA

+

50Ω

INPUT

OUTPUT

RB

100μF

470μF

PW=20μs

IB1

IB2

D.C.≤1%

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

--2.4

--2.0

--1.6

--1.2

--0.8

--0.4

0

--0.4

--0.8

--2.0

--1.6

--2.4

--1.2

ITR04286

IB=0mA

--2mA

--6mA

--8mA

--4mA

--10mA

--20mA

ITR04288

IB=0mA

--1mA

--2mA

--3mA

--4mA

--6mA

--5mA

--7mA

--1.2

--1.0

--0.8

--0.6

--0.4

--0.2

0

--2

--4

--10

--8

--12

--6

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