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2SA1768 Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2SA1768
Description  Bipolar Transistor High breakdown voltage, large current capacity
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SA1768 Datasheet(HTML) 2 Page - ON Semiconductor

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Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=--120V, IE=0A
--0.1
μA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0A
--0.1
μA
DC Current Gain
hFE1VCE=--5V, IC=--100mA
140*
400*
hFE2VCE=--5V, IC=--10mA
90
Gain-Bandwidth Product
fT
VCE=--10V, IC=--50mA
120
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
11
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--250mA, IB=--25mA
--0.2
--0.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
--0.85
--1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--10μA, IE=0A
--180
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--160
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--10μA, IC=0A
--6
V
Turn-ON Time
ton
See specified Test Circuit.
60
ns
Storage Time
tstg
900
ns
Fall Time
tf
60
ns
* : The 2SA1768 is classified by 100mA hFE as follows :
Rank
S
T
hFE
140 to 280
200 to 400
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA1768S-AN
NMP(Taping)
2,500pcs./box
Pb Free
2SA1768T-AN
NMP(Taping)
2,500pcs./box
VR
RL
VCC= --100V
VBE=5V
IC=20IB1= --20IB2= --300mA
+
+
50Ω
INPUT
OUTPUT
RB
100μF
470μF
PW=20μs
IB1
IB2
D.C.≤1%
2SA1768
2SA1768
No.3582-2/7


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