DMB54D0UV

Document number: DS31676 Rev. 5 - 2

1 of 7

www.diodes.com

March 2012

© Diodes Incorporated

DMB54D0UV

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR

Features

•

N-Channel MOSFET and PNP Transistor in One Package

•

Low On-Resistance

•

Very Low Gate Threshold Voltage, 1.0V max

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

ESD Protected MOSFET Gate up to 2kV

•

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT563

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

•

Weight: 0.006 grams (approximate)

Part Number

Case

Packaging

DMB54D0UV-7

SOT563

3,000/Tape & Reel

DMB54D0UV-13

SOT563

10,000/Tape & Reel

Notes:

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

Code

V

W

X

Y

Z

A

B

C

D

E

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

SOT563

Top View

Top View

Internal Schematic

Bottom View

E

D

2

S

2

Q

1

G

2

Q

2

B

C

MB2 = Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

M2

B

YM

ESD PROTECTED TO 2kV