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10-F106NIA150SA-M136F Datasheet(PDF) 6 Page - Vincotech |
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10-F106NIA150SA-M136F Datasheet(HTML) 6 Page - Vincotech |
6 / 27 page 10-F106NIA150SA-M136F Figure 5 IGBT Figure 6 IGBT Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(IC) E = f(RG) With an inductive load at With an inductive load at Tj = 25/150 °C Tj = 25/150 °C VCE = 175 V VCE = 175 V VGE = ±15 V VGE = ±15 V Rgon = 4 Ω IC = 150 A Rgoff = 4 Ω Figure 7 FRED Figure 8 FRED Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor Erec = f(Ic) Erec = f(RG) With an inductive load at With an inductive load at Tj = 25/150 °C Tj = 25/150 °C VCE = 175 V VCE = 175 V VGE = ±15 V VGE = ±15 V Rgon = 4 Ω IC = 150 A Buck Eon High T Eoff High T Eon Low T Eoff Low T 0 2 4 6 8 10 0 50 100 150 200 250 300 I C (A) Eoff High T Eon High T Eon Low T Eoff Low T 0 2 4 6 8 10 0 4 8 12 16 20 R G ( Ω) Erec High T Erec Low T 0 1 2 3 4 5 0 50 100 150 200 250 300 I C (A) Erec High T Erec Low T 0 1 2 3 4 5 0 4 8 12 16 20 R G ( Ω) 6 Revision: 5 Copyright by Vincotech |
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