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V23990-P729-F46-D1-14 Datasheet(PDF) 3 Page - Vincotech |
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V23990-P729-F46-D1-14 Datasheet(HTML) 3 Page - Vincotech |
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3 / 12 page  V23990-P729-F46-PM final data sheet fastPACK 0 H 2nd gen V23990-P729-F46-01-14 Characteristic values/ Charateristische Werte P729-F46 Description Symbol Conditions Datasheet values Unit T(C°) Other conditions VGE(V) VCE(V) IC(A) IF(A) (Rgon-Rgoff) VGS(V) VDS(V) Id(A) Min Typ Max Capacitor Kondensator C value C 45 56 67 nF C Wert Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Gate emitter threshold voltage VGE(th) Tj=25°C VCE=VGE 1m 4 5,5 7 V Gate-Schwellenspannung Tj=125°C Collector-emitter saturation voltage VCE(sat) Tj=25°C 15 25 2,12 2,9 V Kollektor-Emitter Sättigungsspannung Tj=125°C 2,24 Collector-emitter cut-off ICES Tj=25°C 0 600 0,1 mA Kollektor-Emitter Reststrom Tj=125°C Gate-emitter leakage current IGES Tj=25°C 20 0 200 nA Gate-Emitter Reststrom Tj=125°C Integrated Gate resistor Rgint none Integrirter Gate Widerstand Turn-on delay time td(on) Tj=25°C Rgoff=16 ns Einschaltverzögerungszeit Tj=125°C Rgon=16 ±15 600 25 131 Rise time tr Tj=25°C Rgoff=16 ns Anstiegszeit Tj=125°C Rgon=16 ±15 600 25 15 Turn-off delay time td(off) Tj=25°C Rgoff=16 ns Abschaltverzögerungszeit Tj=125°C Rgon=16 ±15 600 25 233 Fall time tf Tj=25°C Rgoff=16 ns Fallzeit Tj=125°C Rgon=16 ±15 600 25 92 Turn-on energy loss per pulse Eon Tj=25°C Rgoff=16 mWs Einschaltverlustenergie pro Puls Tj=125°C Rgon=16 ±15 600 25 1,35 Turn-off energy loss per pulse Eoff Tj=25°C Rgoff=16 mWs Abschaltverlustenergie pro Puls Tj=125°C Rgon=16 ±15 600 25 1,76 Input capacitance Cies Tj=25°C f=1MHz 0 25 2,02 nF Eingangskapazität Tj=125°C Output capacitance Coss Tj=25°C f=1MHz 0 25 0,19 nF Ausgangskapazität Tj=125°C Reverse transfer capacitance Cies Tj=25°C f=1MHz 0 25 0,06 nF Rückwirkungskapazität Tj=125°C Thermal resistance chip to heatsink per chip R thJH Thermal grease thickness50um 0,95 K/W Wärmewiderstand Chip-Kühlkörper pro Chip Warmeleitpaste Dicke50um = 0,61 W/mK K/W Diode H-bridge Diode H-Brücke Diode forward voltage VF Tj=25°C 25 1 2,65 4 V Durchlaßspannung Tj=125°C 2,31 Peak reverse recovery current IRM Tj=25°C $ Rückstromspitze Tj=125°C Rgon=16 ±15 600 25 54,5 Reverse recovery time trr Tj=25°C ns Sperreverzögerungszeit Tj=125°C Rgon=16 ±15 600 25 147 Reverse recovered charge Qrr Tj=25°C uC Sperrverzögerungsladung Tj=125°C Rgon=16 ±15 600 25 3,42 Reverse recovered energy Erec Tj=25°C mWs Sperrverzögerungsenergie Tj=125°C Rgon=16 ±15 600 25 1,55 Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip R thJH Thermal grease thickness 1,99 K/W Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip RthJC WarmeleitpasteDicke50u K/W NTC-Thermistor NTC-Widerstand Rated resistance R25 Tj=25°C Tol. ±5% 20,9 22 23,1 kOhm Nennwiderstand Deviation of R100 DR/R Tc=100°C R100=1503 2,9 %/K Abweichung von R100 Power dissipation given Epcos-Typ P Tj=25°C 210 mW Verlustleistung Epcos-Typ angeben B-value B(25/100) Tj=25°C Tol. ±3% 3980 K B-Wert Copyright by Vincotech 3 Revision: 1 |
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