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June 23, 2014

IRF7809AVPbF-1

Parameter

Min

Typ

Max Units

Conditions

Diode Forward

V

SD

1.3

V

I

Voltage*

Reverse Recovery

Q

rr

120

nC

di/dt ~ 700A/μs

V

Reverse Recovery

Q

rr(s)

150

nC

di/dt = 700A/μs

Charge (with Parallel

(with 10BQ040)

Schottky)

„

V

Parameter

Min

Typ

Max Units

Conditions

Drain-to-Source

BV

DSS

30

–

–

V

V

Breakdown Voltage

Static Drain-Source

R

DS

(on)

7.0

9.0

m

Ω

V

on Resistance

Gate Threshold Voltage

V

GS(th)

1.0

V

V

Drain-Source Leakage

I

DSS

30

V

Current*

150

μAV

Tj = 100°C

Gate-Source Leakage

I

GSS

±100

nA

V

Current*

Total Gate Chg Cont FET

Q

G

41

62

V

Total Gate Chg Sync FET

Q

G

36

54

V

Pre-Vth

Q

GS1

7.0

V

Gate-Source Charge

Post-Vth

Q

GS2

2.3

nC

Gate-Source Charge

Gate to Drain Charge

Q

GD

12

I

Switch Chg(Q

Q

sw

14

21

Output Charge*

Q

oss

30

45

V

Gate Resistance

R

G

1.5

3.0

Ω

Turn-on Delay Time

t

d (on)

14

V

Rise Time

t

r

36

ns

V

Turn-off Delay Time

t

d (off)

96

Clamped Inductive Load

Fall Time

t

f

10

Input Capacitance

C

iss

–

3780

–

Output Capacitance

C

oss

–

1060

–

pF

V

Reverse Transfer Capacitance

C

rss

–

130

–

Electrical Characteristics

Source-Drain Rating & Characteristics

Current

Charge

„

Notes:



Repetitive rating; pulse width limited by max. junction temperature.

‚

Pulse width

≤ 400 μs; duty cycle ≤ 2%.

ƒ

When mounted on 1 inch square copper board, t < 10 sec.

„

Typ = measured - Q

oss

… Typical values measured at V