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IRF7910PBF-1 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7910PBF-1 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7910PbF-1 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 22, 2013 Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 18 ––– ––– S VDS = 6.0V, ID = 8.0A Qg Total Gate Charge ––– 17 26 ID = 8.0A Qgs Gate-to-Source Charge ––– 4.4 ––– nC VDS = 6.0V Qgd Gate-to-Drain ("Miller") Charge ––– 5.2 ––– VGS = 4.5V Qoss Output Gate Charge ––– 16 ––– VGS = 0V, VDS = 10V td(on) Turn-On Delay Time ––– 9.4 ––– VDD = 6.0V tr Rise Time ––– 22 ––– ID = 8.0A td(off) Turn-Off Delay Time ––– 16 ––– RG = 1.8 Ω tf Fall Time ––– 6.3 ––– VGS = 4.5V Ciss Input Capacitance ––– 1730 ––– VGS = 0V Coss Output Capacitance ––– 1340 ––– VDS = 6.0V Crss Reverse Transfer Capacitance ––– 330 ––– pF ƒ = 1.0MHz Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 12 ––– ––– V VGS = 0V, ID = 250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C Reference to 25°C, ID = 1mA ––– 11.5 15 VGS = 4.5V, ID = 8.0A ––– 20 50 VGS = 2.8V, ID = 5.0A VGS(th) Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250μA ––– ––– 100 μA VDS = 9.6V, VGS = 0V ––– ––– 250 VDS = 9.6V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.85 1.3 V TJ = 25°C, IS = 8.0A, VGS = 0V ––– 0.70 ––– TJ = 125°C, IS = 8.0A, VGS = 0V trr Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 8.0A, VR =12V Qrr Reverse Recovery Charge ––– 60 90 nC di/dt = 100A/μs trr Reverse Recovery Time ––– 51 77 ns TJ = 125°C, IF = 8.0A, VR =12V Qrr Reverse Recovery Charge ––– 60 90 nC di/dt = 100A/μs S D G Diode Characteristics 1.8 79 A VSD Diode Forward Voltage Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 100 mJ IAR Avalanche Current ––– 8.0 A Avalanche Characteristics |
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