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KTD1003_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1003_15
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2001. 3. 22
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1003
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
HIGH CURRENT APPLICATION.
FEATURES
High DC Current Gain
: hFE=800 3200. (VCE=5.0V, IC=300mA).
Wide Area of Safe Operation.
Low Collector Saturation Voltage
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
12
3
2. COLLECTOR (HEAT SINK)
A
C
K
F
MILLIMETERS
H
1. BASE
3. EMITTER
FF
D
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE Classification
A:800 1600, B:1200 2400, C:2000 3200
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=60V, IE=0
-
-
100
nA
Emitter Cut-off Current
IEBO
VEB=8V, IC=0
-
-
100
nA
DC Current Gain
hFE(1) Note
VCE=5.0V, IC=300mA
800
1500
3200
hFE(2)
VCE=5.0V, IC=1.0A
400
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=5.0mA
-
0.17
0.30
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=5.0mA
-
0.80
1.2
V
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1.0MHz
-
18
30
pF
Transition Frequency
fT
VCE=10V, IC=500mA, f=100MHz
150
250
-
MHz
Base-Emitter Voltage
VBE
VCE=5V, IC=100mA
-
630
700
mV
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
8
V
Collector Current
IC
1.0
A
Collector Power Dissipation
PC
500
mW
PC *
1
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
PC* : KTD1003 Mounted on Ceramic Substrate (250mm2x0.8t)
Type Name
h
Rank
FE
Lot No.
Marking




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