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KTD1302_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1302_15
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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1995. 10. 17
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1302
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
AUDIO MUTING APPLICATION.
FEATURES
High Emitter-Base Voltage : VEBO=12V(Min.).
High Reverse hFE
: Reverse hFE=20(Min.) (VCE=2V, IC=4mA).
Low on Resistance :RON=0.6 (Typ.) (IB=1mA).
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2
3
B
K
G
H
F
F
E
C
E
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
12
V
Collector Current
IC
300
mA
Base Current
IB
30
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=25V, IE=0
-
-
0.1
A
Emitter Cut-off Current
IEBO
VEB=12V, IC=0
-
-
0.1
A
DC Current Gain
hFE(1) (FOR)
VCE=2V, IC=4mA
200
-
800
hFE(2) (REV)
VCE=2V, IC=4mA
20
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=10mA
-
-
0.25
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB=10mA
-
-
1.0
V
Transition Frequency
fT
VCE=10V, IC=1mA
-
60
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
10
-
pF
On Resistance
Ron
f=1KHz, IB=1mA, VIN=0.3V
-
0.6
-




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