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KTD1304_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1304_15
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2011. 6. 29
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SEMICONDUCTOR
TECHNICAL DATA
KTD1304
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
AUDIO MUTING APPLICATION.
FEATURES
・High Emitter-Base Voltage : V
EBO=12V(Min.).
・High Reverse h
FE
: Reverse hFE=20(Min.) (VCE=2V, IC=4mA).
・Low on Resistance : R
ON=0.6Ω(Max.) (IB=1mA).
MAXIMUM RATING (Ta=25
℃)
DIM
MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q
0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
E
1
2
3
B
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
Type Name
Marking
Lot No.
MAX
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=25V, IE=0
-
-
0.1
μA
Emitter Cut-off Current
IEBO
VEB=12V, IC=0
-
-
0.1
μA
DC Current Gain
hFE1 (FOR)
VCE=2V, IC=4mA
200
-
800
hFE2 (REV)
VCE=2V, IC=4mA
20
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=10mA
-
-
0.25
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB=10mA
-
-
1
V
Transition Frequency
fT
VCE=10V, IC=1mA
-
60
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
10
-
pF
On Resistance
Ron
f=1KHz, IB=1mA, Vin=0.3V
-
0.6
-
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
12
V
Collector Current
IC
300
mA
Base Current
IB
30
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
~150




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