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KTD1411_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1411_15
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2003. 7. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1411
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : hFE=3000(Min.)
(VCE=2V, IC=1A)
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
Ī¦3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
23
+_
+_
+_
15.50 0.5
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
4
A
Base Current
IB
0.5
A
Collector Power Dissipation (Tc=25 )
PC
15
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=80V, IE=0
-
-
20
A
Emitter Cut-off Current
IEBO
VEB=10V, IC=0
-
-
100
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA, IB=0
60
-
-
V
DC Current Gain
hFE(1)
VCE=2V, IC=1A
3000
-
-
hFE(2)
VCE=2V, IC=3A
1000
-
-
Saturation Voltage
Collector-Emitter
VCE(sat)
IC=3A, IB=30mA
-
-
1.5
V
Base-Emitter
VBE(sat)
IC=3A, IB=30mA
-
-
2.0




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