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KTD1624_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1624_15
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2008. 3. 11
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1624
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 5
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTB1124.
MAXIMUM RATING (Ta=25
)
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : hFE (1) Classification A:100
200,
B:140
280,
C:200
400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Vollector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
3
A
Collector Current(Pulse)
ICP
6
A
Base Current
IB
600
mA
Collector Power Dissipation
PC
500
mW
PC*
1
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
ICBO
VCB=40V, IE=0
-
-
1
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
-
-
1
DC Current Gain
hFE(1) (Note)
VCE=2V, IC=100
100
-
400
hFE (2)
VCE=2V, IC=3A
35
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=2A, IB=100
-
0.19
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=2A, IB=100
-
0.94
1.2
V
Transition Frequency
fT
VCE=10V, IC=50
-
150
-
Collector Output Capacitance
Cob
VCB=10V, f=1
, IE=0
-
25
-
Switching
Time
Turn-on Time
ton
-
70
-
nS
Storage Time
tstg
-
650
-
Fall Time
tf
-
35
-
* : Package mounted on ceramic substrate(250mm
2
0.8t)




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