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KTD2424_15 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD2424_15
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2007. 5. 22
1/1
SEMICONDUCTOR
TECHNICAL DATA
KTD2424
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : hFE=3000(Min.) (VCE=2V, IC=1A)
Complementary to KTB1424.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
TO-220IS
0.76+0.09/-0.05
A
B
C
D
E
F
G
0.5+0.1/-0.05
H
1.2+0.25/-0.1
1.5+0.25/-0.1
J
K
L
M
N
P
Q
R
1
2
3
L
N
M
D
N
H
E
R
L
S
0.5 Typ
S
D
A
C
2.70 0.3
+
_
12.0 0.3
+
_
13.6 0.5
+
_
3.7 0.2
+
_
Ī¦3.2 0.2
+
_
10.0 0.3
+
_
15.0 0.3
+
_
3.0 0.3
+
_
4.5 0.2
+
_
2.54 0.1
+
_
+
2.6 0.2
_
6.8 0.1
+
_
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
3
A
Base Current
IB
0.5
A
Collector Power Dissipation (Tc=25
)
PC
25
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=80V, IE=0
-
-
20
A
Emitter Cut-off Current
IEBO
VEB=10V, IC=0
-
-
100
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA, IB=0
60
-
-
V
DC Current Gain
hFE(1)
VCE=2V, IC=1A
3000
-
-
hFE(2)
VCE=2V, IC=3A
1000
-
-
Saturation Voltage
Collector-Emitter
VCE(sat)
IC=3A, IB=30mA
-
-
1.5
V
Base-Emitter
VBE(sat)
IC=3A, IB=30mA
-
-
2.0




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