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BFG21W Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFG21W Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 11 page 1998 Jul 06 2 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES High power gain High efficiency 1.9 GHz operating area Linear and non-linear operation. APPLICATIONS Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. Driver for DCS1800, 1900. DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. PINNING PIN DESCRIPTION 1, 3 emitter 2base 4 collector Fig.1 Simplified outline SOT343R. Marking code: P1. handbook, halfpage Top view MSB842 21 4 3 QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit. MODE OF OPERATION f (GHz) VCE (V) PL (dBm) Gp (dB) C (%) Pulsed class-AB; <1: 2; t p =5ms 1.9 3.6 26 10 typ.55 |
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Similar Description - BFG21W_15 |
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