1998 Jul 06

2

NXP Semiconductors

Product specification

UHF power transistor

BFG21W

FEATURES

 High power gain

 High efficiency

 1.9 GHz operating area

 Linear and non-linear operation.

APPLICATIONS

 Common emitter class-AB output stage in hand held

radio equipment at 1.9 GHz such as DECT, PHS, etc.

 Driver for DCS1800, 1900.

DESCRIPTION

NPN double polysilicon bipolar power transistor with

buried layer for low voltage medium power applications

encapsulated in a plastic, 4-pin dual-emitter SOT343R

package.

PINNING

PIN

DESCRIPTION

1, 3

emitter

2base

4

collector

Fig.1 Simplified outline SOT343R.

Marking code: P1.

handbook, halfpage

Top view

MSB842

21

4

3

QUICK REFERENCE DATA

MODE OF OPERATION

f

(GHz)

(V)

(dBm)

(dB)



C

(%)

Pulsed class-AB;

 <1: 2; t

1.9

3.6

26

10

typ.55