BFU550_15 datasheet(2/22 Pages) PHILIPS

Part #	BFU550

Description	NPN wideband silicon RF transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BFU550

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 5 March 2014

2 of 22

NXP Semiconductors

BFU550

NPN wideband silicon RF transistor

[1]

Tsp is the temperature at the solder point of the collector lead.

[2]

If K > 1 then Gp(max) is the maximum power gain. If K  1 then Gp(max) =MSG.

2.

Pinning information

3.

Ordering information

[1]

The customer evaluation kit contains the following:

a) Unpopulated RF amplifier Printed-Circuit Board (PCB)

b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration

c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)

d) BFU520, BFU530 and BFU550 samples

e) USB stick with data sheets, application notes, models, S-parameter and noise files

4.

Marking

Gp(max)

maximum power gain

IC =15 mA; VCE = 8 V; f = 900 MHz

[2] -21

-

dB

NFmin

minimum noise figure

IC =1 mA; VCE = 8 V; f = 900 MHz; S = opt

-0.7

-

dB

PL(1dB)

output power at 1 dB gain

compression

IC =25 mA; VCE =8V; ZS =ZL =50 ;

f=900MHz

-

13.5

-

dBm

Table 1.

Quick reference data …continued

Tamb =25 C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Discrete pinning

Description

Simplified outline

Graphic symbol

1

collector

2base

3emitter

4emitter

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BFU550

-

plastic surface-mounted package; 4 leads

SOT143B

OM7962

-

Customer evaluation kit for BFU520, BFU530 and BFU550 [1]

-

Table 4.

Marking

Type number

Marking

Description

BFU550

*TC

* = t : made in Malaysia

* = w : made in China

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