BFU550A_15 datasheet(5/22 Pages) PHILIPS

Part #	BFU550A

Description	NPN wideband silicon RF transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BFU550A

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Product data sheet

Rev. 1 — 13 January 2014

5 of 22

NXP Semiconductors

BFU550A

NPN wideband silicon RF transistor

Gp(max)

maximum power gain

f = 433 MHz; VCE =8V

[1]

IC =1mA

-

15

-

dB

IC = 15 mA

-

23.5 -

dB

IC =25mA

-

24

-

dB

f = 900 MHz; VCE =8V

[1]

IC = 1 mA

-

12.5 -

dB

IC =15mA

-

18

-

dB

IC =25mA

-

18

-

dB

f = 1800 MHz; VCE =8 V

[1]

IC = 1 mA

-

10.5 -

dB

IC =15mA

-

12

-

dB

IC =25mA

-

12

-

dB

s

21

2

insertion power gain

f = 433 MHz; VCE =8V

IC =1mA

-

10

-

dB

IC =15mA

-

21

-

dB

IC = 25 mA

-

21.5 -

dB

f = 900 MHz; VCE =8V

IC =1mA

-

8.5

-

dB

IC = 15 mA

-

15.5 -

dB

IC = 25 mA

-

15.5 -

dB

f = 1800 MHz; VCE =8 V

IC =1mA

-

5

-

dB

IC =15mA

-

10

-

dB

IC =25mA

-

10

-

dB

NFmin

minimum noise figure

f = 433 MHz; VCE =8V; S = opt

IC =1mA

-

0.5

-

dB

IC = 15 mA

-

0.9

-

dB

IC = 25 mA

-

1.2

-

dB

f = 900 MHz; VCE =8V; S = opt

IC =1mA

-

0.6

-

dB

IC = 15 mA

-

1.0

-

dB

IC = 25 mA

-

1.3

-

dB

f = 1800 MHz; VCE =8 V; S = opt

IC =1mA

-

0.7

-

dB

IC = 15 mA

-

1.1

-

dB

IC = 25 mA

-

1.4

-

dB

Table 9.

Characteristics …continued

Tamb =25 C unless otherwise specified

Symbol

Parameter

Conditions

Min Typ

Max Unit

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