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BFU550W Datasheet(PDF) 11 Page - NXP Semiconductors |
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BFU550W Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 22 page BFU550W All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 — 13 January 2014 11 of 22 NXP Semiconductors BFU550W NPN wideband silicon RF transistor IC =25 mA; Tamb =25 C. (1) f = 300 MHz (2) f = 433 MHz (3) f = 800 MHz (4) f = 900 MHz (5) f = 1800 MHz IC =25 mA; Tamb =25 C. If K >1 then Gp(max) = maximum power gain. If K < 1 then Gp(max) = MSG. (1) f = 300 MHz (2) f = 433 MHz (3) f = 800 MHz (4) f = 900 MHz (5) f = 1800 MHz Fig 14. Insertion power gain as a function of collector-emitter voltage; typical values Fig 15. Maximum power gain as a function of collector-emitter voltage; typical values |
Similar Part No. - BFU550W_15 |
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Similar Description - BFU550W_15 |
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