BFU590Q_15 datasheet(9/19 Pages) PHILIPS

Part #	BFU590Q

Description	NPN wideband silicon RF transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BFU590Q

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Product data sheet

Rev. 1 — 28 April 2014

9 of 19

NXP Semiconductors

BFU590Q

NPN wideband silicon RF transistor

IC =50 mA; VCE =8V; Tamb =25 C.

IC =80 mA; VCE =8V; Tamb =25 C.

Fig 10. Gain as a function of frequency; typical values

Fig 11. Gain as a function of frequency; typical values

VCE =8V; Tamb =25 C.

(1) f = 300 MHz

(2) f = 433 MHz

(3) f = 800 MHz

(4) f = 900 MHz

(5) f = 1800 MHz

VCE =8V; Tamb =25 C.

If K >1 then Gp(max) = maximum power gain. If K < 1 then

Gp(max) = MSG.

(1) f = 300 MHz

(2) f = 433 MHz

(3) f = 800 MHz

(4) f = 900 MHz

(5) f = 1800 MHz

Fig 12. Insertion power gain as a function of collector

current; typical values

Fig 13. Maximum power gain as a function of collector

current; typical values

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