BFU610F

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Product data sheet

Rev. 2 — 11 January 2011

3 of 12

NXP Semiconductors

BFU610F

NPN wideband silicon RF transistor

4.

Marking

5.

Limiting values

[1]

6.

Thermal characteristics

Table 4.

Marking

Type number

Marking

Description

BFU610F

D1*

* = p : made in Hong Kong

* = t : made in Malaysia

* = w : made in China

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

16

V

collector-emitter voltage

open base

-

5.5

V

emitter-base voltage

open collector

-

2.5

V

collector current

-

10

mA

total power dissipation

[1] -

136

mW

storage temperature

−65

+150

°C

junction temperature

-

150

°C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to solder point

440

K/W

Fig 1.

Power derating curve

0

160

120

40

80

001aam802

100

50

150

200

(mW)

0