BFU730LX_15 datasheet(1/13 Pages) PHILIPS

Part #	BFU730LX

Description	NPN wideband silicon germanium RF transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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1.

Product profile

1.1 General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a

SOT883C leadless ultra small plastic SMD package.

1.2 Features and benefits

 Leadless ultra small plastic SMD package 1.0 mm

 0.6 mm  0.34 mm

 Low noise high gain microwave transistor

 Noise figure (NF) = 0.75 dB at 6 GHz

 High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz

 Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:

 input third-order intercept point (IP3i) = 15 dBm

 input power at 1 dB gain compression (Pi(1dB)) = 0 dBm

See application note AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with

BFU730LX.

 110 GHz fT silicon germanium technology

1.3 Applications

 Wi-Fi / WLAN

See application notes:

 AN11223: Low Noise Fast Turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730LX

 AN11224: Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX

 WiMAX

 LNA for GPS, GLONASS, Galileo and Compass (BeiDou)

 DBS (2nd LNA stage, mixer stage, DRO), SDARS

 RKE, AMR / Zigbee

 LNA for microwave communications systems

 Low current battery equipped applications

 Microwave driver / buffer applications

BFU730LX

NPN wideband silicon germanium RF transistor

Rev. 1 — 8 May 2013

Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

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BFU730LX Datasheet(PDF) 1 Page - NXP Semiconductors

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