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V23990-P769-A-D5-14 Datasheet(PDF) 10 Page - Vincotech |
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V23990-P769-A-D5-14 Datasheet(HTML) 10 Page - Vincotech |
10 / 24 page V23990-P769-A-PM V23990-P769-AY-PM datasheet Figure 17 Output inverter FWD Figure 18 Output inverter FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon) At At Tj = 25/150 °C Tj = 25/150 °C VCE = 600 V VR = 600 V VGE = ±15 V IF = 75 A Rgon = 8 Ω VGE = ±15 V Figure 19 Output inverter IGBT Figure 20 Output inverter FWD IGBT transient thermal impedance FWD transient thermal impedance as a function of pulse width as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) At At D = tp / T D = tp / T RthJH = 0,451 K/W RthJH = 0,54 K/W RthJH = 0,70 K/W RthJH = 0,70 K/W Single device heated AlI devices heated Single device heated AlI devices heated IGBT thermal model values FWD thermal model values R (K/W) Tau (s) R (K/W) Tau (s) R (K/W) Tau (s) R (K/W) Tau (s) 0,05 3,0E+00 0,13 3,0E+00 0,02 9,9E+00 0,02 9,9E+00 0,08 4,5E-01 0,08 4,5E-01 0,08 1,4E+00 0,08 1,4E+00 0,19 7,6E-02 0,19 7,6E-02 0,17 1,6E-01 0,17 1,6E-01 0,09 1,7E-02 0,09 1,7E-02 0,31 3,6E-02 0,31 3,6E-02 0,02 1,7E-03 0,02 1,7E-03 0,08 7,1E-03 0,08 7,1E-03 0,02 2,9E-04 0,02 2,9E-04 0,05 5,3E-04 0,05 5,3E-04 Output Inverter t p (s) 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 110 10 -5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 110 10 -5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 dI0/dt dIrec/dt 0 2000 4000 6000 8000 10000 12000 0 8 16 24 32 40 R Gon ( Ω) dI0/dt dIrec/dt 0 1000 2000 3000 4000 5000 0 25 50 75 100 125 150 I C (A) 25/150 25/150 copyright Vincotech 10 05 Jun 2015 / Revision: 5 |
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