Electronic Components Datasheet Search |
|
IRF9910PBF Datasheet(PDF) 1 Page - International Rectifier |
|
IRF9910PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 07/23/08 IRF9910PbF HEXFET® Power MOSFET Notes through
are on page 10 SO-8 Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free VDSS ID 20V Q1 13.4m :@VGS = 10V 10A Q2 9.3m :@VGS = 10V 12A RDS(on) max Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.3 9.9 A IDM Pulsed Drain Current c 83 98 PD @TA = 25°C Power Dissipation W PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 42 °C/W RθJA Junction-to-Ambient fg ––– 62.5 ± 20 20 -55 to + 150 2.0 0.016 1.3 PD - 95728A |
Similar Part No. - IRF9910PBF_15 |
|
Similar Description - IRF9910PBF_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |