IRF9910PBF_15 datasheet(1/10 Pages) IRF

Part #	IRF9910PBF

Description	Fully Characterized Avalanche Voltage and Current

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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www.irf.com

1

07/23/08

IRF9910PbF

HEXFET® Power MOSFET

Notes

through are on page 10

SO-8

Benefits

l Very Low RDS(on) at 4.5V VGS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

l 20V VGS Max. Gate Rating

Applications

l Dual SO-8 MOSFET for POL

converters in desktop, servers,

graphics cards, game consoles

and set-top box

l Lead-Free

VDSS

ID

20V

Q1 13.4m

:@VGS = 10V 10A

Q2 9.3m

:@VGS = 10V

12A

RDS(on) max

Absolute Maximum Ratings

Parameter

Q1 Max.

Q2 Max.

Units

VDS

Drain-to-Source Voltage

V

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

10

12

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

8.3

9.9

A

IDM

Pulsed Drain Current

c

83

98

PD @TA = 25°C

Power Dissipation

W

PD @TA = 70°C

Power Dissipation

Linear Derating Factor

W/°C

TJ

Operating Junction and

°C

TSTG

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

–––

42

°C/W

RθJA

Junction-to-Ambient

fg

–––

62.5

± 20

20

-55 to + 150

2.0

0.016

1.3

PD - 95728A

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