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KDR730E Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KDR730E Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
1 / 2 page 2014. 3. 31 1/2 SEMICONDUCTOR TECHNICAL DATA KDR730E SCHOTTKY BARRIER TYPE DIODE Revision No : 1 LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING. FEATURES ・Low Reverse Current : I R=0.1μ A(Typ.) ・High Reliability. ・Small Package : ESC. MAXIMUM RATING (Ta=25 ℃) * : Mounted on a glass epoxy circuit board of 20 ×20mm, pad dimension of 4 ×4mm. ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 30 V Average Forward Current IO 200 mA Surge Current (10ms) IFSM 1 A Power Dissipation PD 150 * mW Junction Temperature Tj 125 ℃ Storage Temperature Range Tstg -40 ~125 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=200mA - - 0.60 V Reverse Current IR VR=10V - - 1.0 μA |
Similar Part No. - KDR730E_15 |
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Similar Description - KDR730E_15 |
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