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P4C423-10CMB Datasheet(PDF) 2 Page - Pyramid Semiconductor Corporation |
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P4C423-10CMB Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation |
2 / 8 page P4C423 Page 2 of 8 Document # SRAM108 REV OR DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage(2) P4C422 Min Max V OH Output High Voltage I OH = –5.2 mA, VCC = Min.2.4 V V OL Output Low Voltage I OL = +8 mA, VCC = Min. 0.4 V V IH Input High Voltage 2.1 V V IL Input Low Voltage 0.8 V V CL Input Clamp Diode Voltage I IN = –10 mA –1.5 V I IX Input Load Current GND≤ V IN ≤ VCC –10 10 µA I OZ Output Current (High Z) V OL ≤ VOUT ≤ VOH , Output Disabled –10 10 µA I OS Output Short Circuit V CC= Max., VOUT = GND 90 mA Current(3) Grade(2) Ambient Temp Gnd Vcc Commercial 0°C to 70°C 0V 5.0V ±10% Military –55°C to 125°C 0V 5.0V ±10% Symbol Parameter Test Conditions Unit Symbol Parameter Conditions Typ. Unit C IN Input Capacitance V IN = 0V 5 pF C OUT Output Capacitance V OUT = 0V 7 pF CAPACITANCES(4) (V CC = 5.0V, TA = 25°C, f = 1.0MHz) RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit T BIAS Temperature Under – 55 to +125 °C Bias T STG Storage Temperature – 65 to +150 °C I OUT DC Output Current 20 mA MAXIMUM RATINGS(1) Symbol Parameter Value Unit V CC Power Supply Pin with – 0.5 to +7 V Respect to GND Terminal Voltage with – 0.5 to V TERM Respect to GND V CC + 0.5 V (up to 7.0V) T A Operating Temperature – 55 to +125 °C Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds. 4. This parameter is sampled and not 100% tested. 5. Transition time is ≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for 20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input and output levels of 1.5V. The output loading is equivalent to the specified I OL/IOH with a load capacitance of 15 pF (10, 12) or 30 pF (15, 20, 25, 35) as in Fig. 1a and 1b respectively. 6. Transition time is ≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for 20, 25, and 35 ns products, see Fig 1d. Transition is measured at steady state HIGH level -500mV or steady state LOW level +500mV on the output from a level on the input with load shown in Fig. 1c. 7. t W is measured at tWSA = min.; tWSA is measured at tW = min. POWER DISSIPATION CHARACTERISTICS VS. SPEED Symbol I CC Parameter Dynamic Operating Current Temperature Range Commercial Military -10 90 N/A -12 90 N/A -15 90 90 -20 90 90 -25 65 90 -35 65 90 Unit mA mA |
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