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PYA28C010-15L32M Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation |
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PYA28C010-15L32M Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation |
5 / 15 page PYA28C010 - 128K x 8 EEPROM Page 5 Document # EEPROM103 REV 03 Sym Parameter -120 -150 -200 -250 Unit Min Max Min Max Min Max Min Max t AVAV Read Cycle Time 120 150 200 250 ns t AVQV Address Access Time 120 150 200 250 ns t ELQV Chip Enable Access Time 120 150 200 250 ns t OLQV Output Enable Access Time 50 50 50 50 ns t ELQx Chip Enable to Output in Low Z 0 0 0 0 ns t EHQZ Chip Disable to to Output in High Z 50 50 50 50 ns t OLQx Output Enable to Output in Low Z 0 0 0 0 ns t OHQZ Output Disable to Output in High Z 50 50 50 50 ns t AVQx Output Hold from Address Change 0 0 0 0 ns AC ELECTRICAL CHARACTERISTICS—READ CYCLE (V CC = 5V ± 10%, All Temperature Ranges) (2) TIMIng WAVEFORM OF READ CYCLE POWER-UP TIMIng Symbol Parameter Max Unit t PUR Power-up to Read operation 100 µs t PUW Power-up to Write operation 5 ms |
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