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BCX17 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BCX17 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 7 page 2004 Jan 16 4 NXP Semiconductors Product data sheet PNP general purpose transistors BCX17; BCX18 CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. VBE decreases by approximately −2 mV/°C with increasing temperature. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −20 V − − −100 nA IE = 0; VCB = −20 V; Tj = 150 °C − − −5 μA IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 nA hFE DC current gain IC = −100 mA; VCE = −1 V 100 − 600 IC = −300 mA; VCE = −1 V 70 − − IC = −500 mA; VCE = −1 V 40 − − VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA − − −620 mV VBE base-emitter voltage IC = −500 mA; VCE = −1 V; note 1 − − −1.2 V Cc collector capacitance IE = Ie = 0; VCB = −10 V; f = 1 MHz − 9 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 80 − − MHz |
Similar Part No. - BCX17_15 |
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Similar Description - BCX17_15 |
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