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FZ06BIA045FH01 Datasheet(PDF) 4 Page - Vincotech |
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FZ06BIA045FH01 Datasheet(HTML) 4 Page - Vincotech |
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4 / 29 page  FZ06BIA045FH01 preliminary datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 0,7 1,01 1,3 Tj=125°C 0,93 Tj=25°C 0,86 Tj=125°C 0,75 Tj=25°C 0,1 Tj=125°C 0,1 Tj=25°C 0,05 Tj=125°C Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 1,68 K/W Tj=25°C 0,04 Tj=125°C 0,09 Tj=25°C 2,1 3 3,9 Tj=125°C Tj=25°C 200 Tj=125°C Tj=25°C 25000 Tj=125°C Tj=25°C 28 Tj=125°C 27 Tj=25°C 5 Tj=125°C 6 Tj=25°C 154 Tj=125°C 167 Tj=25°C 10 Tj=125°C 9 Tj=25°C 0,063 Tj=125°C 0,072 Tj=25°C 0,025 Tj=125°C 0,025 Tj=25°C 150 190 Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C 1 1,54 1,8 Tj=150°C 1,71 Tj=25°C 400 Tj=150°C Tj=25°C 16,63 Tj=150°C 14,68 Tj=25°C 9,3 Tj=150°C 10,4 Tj=25°C 0,058 Tj=150°C 0,064 Tj=25°C 0,005 Tj=150°C 0,006 di(rec)max Tj=25°C 4244 /dt Tj=150°C 2752 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 2,34 K/W 15 8 Rgon=4 Ω 10 400 400 20 10 0 f=1MHz Rgon=4 Ω 10 RDS(on) tf Fall time Turn-off energy loss per pulse Input capacitance Eon Qgs Qgd IRRM Irm Qrr trr VF Erec Turn off delay time Forward voltage Input Boost MOSFET Reverse transfer capacitance Gate to source charge Turn-on energy loss per pulse Output capacitance Gate to drain charge Total gate charge Gate threshold voltage Gate to Source Leakage Current Rgoff=4 Ω VGS=VDS 0 tr td(ON) Idss Ir Value Conditions Ciss RthJH Coss Crss Thermal resistance chip to heatsink per chip 0,76 Thermal grease thickness ≤50um λ = 1 W/mK Characteristic Values Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) solar inverte Vto rt Bypass FWD 15 V V Ω mA Reverse current 44 100 44 400 10 48 0 15 Tj=25°C 34 nA Static drain to source ON resistance 400 600 Zero Gate Voltage Drain Current td(OFF) Turn On Delay Time Rise Time Rgon=4 Ω Qg Eoff Reverse recovery time Peak rate of fall of recovery current Input Boost FWD Reverse recovered energy Reverse leakage current Peak recovery current Reverse recovery charge 10 15 1200 320 6800 51 Ω nC A ns V mWs μC μA mWs A/ μs ns pF Igss nA V 0,003 V(GS)th K/W 4 Revision: 4 |
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